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TIP132 TIP135 TIP137
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s
STMicroelectronics PREFERRED SALESTYPES
APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
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DESCRIPTION The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP137 . Also TIP135 is a PNP type.
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO VEBO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tcas e 25 o C T amb 25 o C Storage Temperature Max. Operating Junction Temperature TIP135 60 60 5 8 12 0.3 70 2 -65 to 150 150 Value T IP132 T IP137 100 100 V V V A A A W W
o o
Un it
C C
* For PNP types voltage and current values are negative.
October 1999
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TIP132 / TIP135 / TIP137
THERMAL DATA
R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.78 63.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l I CEO I CBO IEBO Parameter Collector Cut-off Current (IB = 0) Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Con ditions V CE = Half Rated V CEO V CB = Rated V CBO V EB = 5 V I C = 30 mA for TIP135 for T IP132/T IP137 IC = 4 A IC = 6 A IC = 4 A IC = 1 A IC = 4 A I B = 16 mA I B = 30 mA V CE = 4 V V CE = 4 V V CE = 4 V 500 1000 Min. T yp. Max. 0.5 0.2 5 Unit mA mA mA
V CEO(sus ) * Collector-Emitter Sustaining Voltage (I B = 0) VCE(sat )* V BE * h F E* Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain
60 100 2 4 2.5 15000
V V V V V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative.
Safe Operating Areas
Power Derating Curve
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TIP132 / TIP135 / TIP137
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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TIP132 / TIP135 / TIP137
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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